cascadable silicon bipolar mmi c amplifier t echnical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 2.5 ghz ? 12.0 db typical gain at 1. 0 ghz ? 10.0 dbm typical p 1 db at 1. 0 ghz ? unconditionally stable (k>1) ? low cost plastic package MSA-0385 85 plastic package description the MSA-0385 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 plastic package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using ag ilents 10 ghz f t , 2 5 ghz f ma x , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0385 absolute maximum ratings parameter absolute maximum [1] device current 70 ma power dissipation [2,3] 400 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 105 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 9.5 mw/ c for t c > 108 c. 4. see measurements section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 12.5 f = 1.0 ghz 10.0 12.0 d g p gain flatness f = 0.1 to 1.6 ghz db 0.7 f 3 db 3 db bandwidth ghz 2.5 input vswr f = 0.1 to 3.0 ghz 1.5:1 output vswr f = 0.1 to 3.0 ghz 1.7:1 nf 50 w noise figure f = 1.0 ghz db 6.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 10.0 ip 3 third order intercept point f = 1.0 ghz dbm 23.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.0 5.0 6.0 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 20 to 50 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0385 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .09 178 12.6 4.26 175 C18.1 .124 2 .13 C10 0.2 .09 171 12.5 4.24 170 C18.4 .120 3 .13 C20 0.4 .08 166 12.4 4.17 161 C18.4 .121 6 .14 C41 0.6 .07 160 12.3 4.10 151 C18.0 .126 8 .15 C57 0.8 .07 155 12.1 4.01 142 C17.9 .127 12 .16 C71 1.0 .06 152 11.9 3.92 133 C17.6 .132 12 .18 C84 1.5 .05 C169 11.2 3.63 112 C16.5 .149 18 .21 C112 2.0 .08 C174 10.4 3.29 92 C15.6 .167 19 .23 C136 2.5 .12 C173 9.5 2.98 79 C14.6 .186 22 .25 C150 3.0 .20 178 8.4 2.64 63 C14.1 .198 20 .26 C166 3.5 .25 170 7.5 2.36 47 C13.5 .211 17 .25 C174 4.0 .28 160 6.5 2.12 33 C13.0 .207 13 .24 C180 5.0 .42 134 4.7 1.71 7 C12.2 .224 4 .20 168 6.0 .50 99 2.7 1.37 C18 C12.0 .252 C7 .23 133 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 35 ma. 0 2 4 6 8 10 12 14 gain flat to dc v d (v) figure 2. device current vs. voltage. 0 10 20 30 60 i d (ma) 0 2 34 56 1 40 50 t c = +85 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 g p (db) 15 25 30 40 50 35 20 5 6 7 11 12 13 ?5 0 +25 +55 +85 8 9 10 p 1 db (dbm) nf (db) g p nf g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =35ma. p 1 db 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 3 6 9 12 15 18 p 1 db (dbm) i d = 50 ma i d = 20 ma i d = 35 ma 5.5 5.0 6.0 6.5 7.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 20 ma i d = 35 ma i d = 50 ma
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9570e (11/99) 1 3 4 2 5 typ. 45 ground ground rf output and bias rf input .085 2.15 .286 .030 7.36 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .020 .51 .07 0.43 .060 .010 1.52 .25 .006 .002 .15 .05 0.143 0.015 3.63 0.38 85 plastic package dimensions a03
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